Monolithic visible-infrared focal plane array on silicon

ABSTRACT

A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.

TECHNICAL FIELD

The various embodiments of this invention relate generally tosemiconductor devices and fabrication techniques and, more specifically,relate to the fabrication of semiconductor detectors of electromagnetic(EM) radiation including EM radiation in the visible and the infrared(IR) wavelength bands.

BACKGROUND

Visible to IR responsive focal plane arrays (FPAs) have applications innight vision devices and various sensing and imaging applications. Thecurrent dominant technology uses Group II-VI semiconductor materialssuch as HgCdTe for detecting IR radiation. However, conventional HgCdTedetectors can exhibit manufacturing and performance issues including,for example, non-uniformity and a difficulty to scale up.

SUMMARY

An aspect of the non-limiting embodiments of this invention is astructure that comprises a silicon substrate; silicon readout circuitrydisposed on a first portion of a top surface of the silicon substrate;and a radiation detecting pixel disposed on a second portion of the topsurface of the silicon substrate. The radiation detecting pixel iscomprised of a plurality of radiation detectors connected with thesilicon readout circuitry. In the structure the plurality of radiationdetectors are comprised of at least one visible wavelength radiationdetector comprised of germanium and at least one infrared wavelengthradiation detector comprised of a Group III-V semiconductor material.

Another aspect of the non-limiting embodiments of this invention is amethod that comprises providing a silicon substrate; forming siliconreadout circuitry on a first portion of a top surface of the siliconsubstrate; and forming a radiation detecting pixel on a second portionof the top surface of the silicon substrate. The radiation detectingpixel is comprised of a plurality of radiation detectors connected withthe silicon readout circuitry. The plurality of radiation detectors areformed to comprise at least one visible wavelength radiation detectorcomprised of germanium and at least one infrared wavelength radiationdetector comprised of a Group III-V semiconductor material.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIGS. 1-12 are each an enlarged cross-sectional view showing variousinitial, intermediate and completed or substantially completedmulti-wavelength photodetector structures and photodetectors that arefabricated in accordance with embodiments of this invention, wherein thevarious layer thicknesses and other dimensions are not necessarily drawnto scale. More specifically:

FIG. 1 shows for a first, vertically stacked photodetector, bottom sideilluminated embodiment a starting structure comprised of a siliconsubstrate having an overlying BOX layer and a semiconductor on insulator(SOI) layer comprised of Ge that functions as a buffer layer;

FIG. 2 shows a result of an etching process where a portion of the Gelayer and the underlying BOX layer are removed to expose a surface ofthe silicon substrate in what may be referred to as a circuit regionwherein CMOS readout circuits are fabricated;

FIG. 3 illustrates a result of several sequentially performed processingsteps that grow a layer of protective oxide to cover the CMOS circuitryfollowed by a succession of semiconductor epitaxial deposition steps togrow stacked photodetectors, first the visible photodetector followed bythe IR photodetector; and

FIG. 4 illustrates a result of several sequentially performed processingsteps to form a mesa structure from the dual-wavelength rangephotodetector stack and to fabricate contacts and vertical andhorizontal interconnects between the photodetectors and the CMOS readoutcircuitry.

FIG. 5 shows an alternate embodiment of the vertically stackedphotodetector structure that eliminates the BOX layer and grows the Gebuffer layer directly on the silicon substrate.

FIGS. 6A, 6B, 6C, 6D, 6E and 6F, collectively referred to as FIG. 6,each show an enlarged, non-limiting embodiment of a photodetector usedin the front-side illuminated FPA embodiment of FIGS. 7-10, where

FIG. 6A shows a non-limiting example of a GaAs photodetector structure;

FIG. 6B shows a non-limiting example of a Ge photodetector structure;

FIG. 6C shows a non-limiting example of a first InGaAs photodetectorstructure;

FIG. 6D shows a non-limiting example of a second InGaAs photo detectorstructure;

FIG. 6E shows a non-limiting example of a quantum dot IR photodetectorstructure; and

FIG. 6F shows a non-limiting example of a Type II heterojunction IRphotodetector structure.

FIG. 7 shows for a first, lateral photodetector front-side illuminatedembodiment a starting structure comprised of a silicon substrate havingan overlying BOX layer and an SOI comprised of Ge, and a result of theformation of CMOS readout circuitry, the formation of an oxide layer,the opening of an aperture in the oxide layer and the fabrication of afirst photodetector (a visible wavelength GaAs photodetector) in theaperture;

FIG. 8 shows a result of the opening of a second aperture in the oxidelayer and the fabrication of a second photodetector (a visiblewavelength Ge photodetector) in the second aperture; and

FIG. 9 shows a completed lateral photodetector FPA after fabrication oftwo lateral IR Group III-V photodetectors and the formation ofinterconnects between the visible and IR photodetectors and the CMOSreadout circuitry.

FIG. 10 shows a non-limiting example of a bulk (non-SOT) Si substratefront-side illuminated FPA embodiment that forms a recess in the Sisubstrate wherein the photodetectors are fabricated.

FIGS. 11 and 12 illustrate the fabrication of a back-side illuminatedFPA embodiment that uses photoconductive Ge and Group III-V detectors asopposed to the photodetector embodiments described thus far.

DETAILED DESCRIPTION

The word “exemplary” is used herein to mean “serving as an example,instance, or illustration.” Any embodiment described herein as“exemplary” is not necessarily to be construed as preferred oradvantageous over other embodiments. All of the embodiments described inthis Detailed Description are exemplary embodiments provided to enablepersons skilled in the art to make or use the invention and not to limitthe scope of the invention which is defined by the claims.

The terms “epitaxial growth and/or deposition” and “epitaxially formedand/or grown” mean the growth of a semiconductor material on adeposition surface of a semiconductor material, in which thesemiconductor material being grown has the same crystallinecharacteristics as the semiconductor material of the deposition surface.In an epitaxial deposition process, the chemical reactants provided bysource gases are controlled and the system parameters are set so thatthe depositing atoms arrive at the deposition surface of thesemiconductor substrate with sufficient energy to move around on thesurface and orient themselves to the crystal arrangement of the atoms ofthe deposition surface. Therefore, an epitaxial semiconductor materialhas the same crystalline characteristics as the deposition surface onwhich it is formed. For example, an epitaxial semiconductor materialdeposited on a {100} crystal surface will take on a {100} orientation.In some embodiments, epitaxial growth and/or deposition processes areselective to forming on semiconductor surface, and do not depositmaterial on dielectric surfaces, such as silicon dioxide or siliconnitride surfaces.

Examples of various epitaxial growth process apparatuses that aresuitable for use in implementing the embodiments of this inventioninclude, but are not limited to, rapid thermal chemical vapor deposition(RTCVD), low-energy plasma deposition (LEPD), ultra-high vacuum chemicalvapor deposition (UHVCVD), atmospheric pressure chemical vapordeposition (APCVD), molecular beam epitaxy (MBE) and chemical vapordeposition (CVD). The temperature for an epitaxial deposition processtypically ranges from about 550° C. to about 900° C. Although highertemperature will typically result in faster deposition of thesemiconductor material, the faster deposition may also result in crystaldefects and film cracking.

Visible EM radiation can be characterized as having a wavelength in arange of about 380 nm to about 760 nm. Infrared EM radiation can becharacterized as having a wavelength in a range of about 750 nm to about2500 nm (2.5 μm, near IR). Mid-IR radiation can be characterized ashaving a wavelength in a range of about 2.5 μm to about 10 μm, while farIR radiation can be characterized as having a wavelength in a range ofabout 10 μm to about 1000 μm.

In at least one embodiment thereof this invention can employsemiconductor on insulator (SOI) technology where a thin semiconductorlayer, e.g., Ge, is formed over an insulating layer, such as siliconoxide, which in turn is formed over a (bulk) substrate, such as a Sisubstrate. The insulating layer can be referred to as a buried oxide(BOX) layer or simply as a BOX.

It is pointed out that while certain aspects and embodiments of thisinvention can be employed with SOI substrates, the invention can also berealized using bulk (e.g., silicon) substrates.

The exemplary embodiments of this invention use Group III-V and Si, Gemonolithic integration to fabricate a visible and an IR responsive FPAthat reduces cost and improves performance. The embodiments enable amonolithic structure to be formed wherein silicon-based CMOS readoutcircuitry is fabricated in conjunction with Ge-based visible detectors(e.g., responsive to wavelengths in a range of about 400 nm to about 1.3microns), and Group III-V based IR detectors (e.g., responsive towavelengths in a range of about 1.3 microns to about 2.6 microns (orlonger)).

The embodiments of this invention are described below in the context ofa vertical structure intended for back-side illumination and a lateralstructure intended for front-side illumination. The vertical, back-sideilluminated structure will be described first with reference to FIGS.1-5.

FIG. 1 shows a cross-sectional enlarged view of a starting structurecomprised of a silicon substrate 10 having an overlying BOX layer 12 anda semiconductor on insulator (SOI) layer 14 comprised of Ge. The siliconsubstrate 10 can have any desired thickness (it is subsequentlythinned). The BOX layer 12 can have an exemplary thickness of about 100nm and the Ge layer 14 can have an exemplary thickness of about 50 nm.

FIG. 2 shows a result of an etching process (a multi-step etchingprocess) where a portion of the Ge layer 14 and the underlying BOX layer12 are removed to expose a surface of the silicon substrate 10 in whatmay be referred to as a circuit region 15. In the circuit region 15 isformed by conventional silicon processing CMOS readout and supportcircuitry 16 for the subsequently formed visible and IR radiationdetectors. A typical maximum processing temperature that is achievedduring the CMOS processing is about 1000° C. (prior to a silicidingstep). It can be noted that it is a feature of this invention to performsuch high temperature processing prior to the epitaxial deposition ofGroup III-V material layers.

FIG. 3 illustrates a result of several sequentially performed processingsteps. First, a layer of protective oxide 18 (e.g., SiO₂) is grown so asto cover the CMOS circuitry 16. The oxide layer 18 is then selectivelyremoved so as to expose the top surface of the Ge layer 14 in what willbe a region containing the vertically stacked photodetectors. The Gelayer 14 may be considered to function as a Ge buffer layer. Next asuccession of semiconductor epitaxial deposition steps are performed togrow the stacked photodetectors, first the visible photodetectorfollowed by the IR photodetector. Both photodetectors are formed to havea P-N junction, where the visible photodetector is formed in thisnon-limiting embodiment as a P—I—N(P-intrinsic-N) junction and where theIR photodetector is formed in this non-limiting embodiment also as aP—I—N junction.

In general the photodetectors (sensors) of this and other embodimentscan operate with a fixed bias voltage and output a current to the CMOScircuitry 16.

In the illustrated (non-limiting) embodiment an N-type Ge layer 20 isgrown on the starting Ge (buffer) layer 14 to have a thickness of about200 nm. The N-type Ge layer 20 can be doped with, for example, Arsenicwith a dopant concentration of about 5E18 cm⁻³. A substantially undopedintrinsic Ge layer 22 is then grown to have a thickness of about 1000nm, followed by the growth of a P-type Ge layer 24 having a thickness ofabout 200 nm. The P-type Ge layer 24 can be doped with, for example,Boron with a dopant concentration of about 5E18 cm³. The layers 20, 22and 24 will function in the final structure as the visible P—I—Nphotodetector.

Next a sequence of layers of Group III-V material is grown to form theIR photodetector. A first step in this process grows a substantiallyundoped InP/GaAs buffer layer 26 on the P-type Ge layer 24. A thicknessof the InP/GaAs buffer layer 26 can be about 1 micron. This is followedby the growth of an N-type InGaAs layer 28 having, in a non-limitingembodiment, the composition In_(0.82)Ga_(0.18)As. The layer 28 can havea thickness of about 200 nm and is doped N-type using, for example, Siwith a dopant concentration of about 5E18 cm⁻³. This is followed by thegrowth of a substantially undoped (intrinsic) layer of InGaAs layer 30having, in a non-limiting embodiment, the compositionIn_(0.82)Ga_(0.18)As. The layer 30 can have a thickness of about 1000nm. This is followed by the growth of a P-type InGaAs layer 32 having,in a non-limiting embodiment, the composition In_(0.82)Ga_(0.18)As. Thelayer 32 can have a thickness of about 200 nm and is doped P-type using,for example, Zn with a dopant concentration of about 5E18 cm⁻³. Thelayers 28, 30 and 32 will function in the final structure as the IRP—I—N photodetector.

FIG. 4 also illustrates a result of several sequentially performedprocessing steps. First, the oxide layer 18 can be removed in whole orin part and the dual-wavelength range photodetector stack composed ofthe layers 14-32 is etched using a multi-step etching and maskingprocess to form a mesa structure having staggered, upwardly slopingsidewalls. Next contacts are formed on exposed edge portions of thelayers 20, 24, 28 and 32, followed by the growth of a dielectric layer18A. The top surface of the dielectric layer 18A is then planarized andopenings are formed to the individual CMOS circuits 16 and to thecontacts formed on the edges of the layers 20, 24, 28 and 32. CMOScircuitry contact silicide 16A is then formed on the CMOS circuits 16 ata temperature of about 400° C. This is followed by the formation ofvertical conductive interconnects 34 (e.g., Cu, Al, Au, etc.) to thesilicided contacts 16A and to the contacts formed on the edge portionsof the layers 20, 24, 28 and 32. A metal interconnect layer 36 is thenformed by applying a dielectric and patterning lateral conductors tointerconnect the vertical interconnects to the CMOS readout circuitry 16to the individual photo detectors via the contacts on the edge portionsof the layers 20, 24, 28 and 32 and their associated verticalinterconnects. A handling (handle) wafer 38 (e.g., a Si handle wafer) isthen applied over the metal interconnect layer 36 to provide structuralsupport, followed by thinning of the Si substrate 10. As the bottomsurface of the thinned Si substrate 10A functions as a receiving surfacefor incident EM radiation in this back-side illuminated embodiment, onesuitable thickness for the thinned Si substrate 10A is about 100 nm orless. With this thickness the Si substrate 10A is substantiallytransparent to the incident EM radiation.

In operation the incident EM radiation passes through the Si substrate10A and the substantially transparent (at the wavelengths of interest)BOX layer 12. The shorter visible wavelengths are substantially absorbedin the Ge P—I—N photodetector to generate first photocarriers, while thelonger wavelength IR radiation passes through the layers that comprisethe Ge P—I—N photodetector is substantially absorbed in the InGaAs P—I—Nphotodetector to generate second photocarriers. These generatedphotocarriers are transported to the CMOS readout circuitry 16 via themetal interconnect layer 36 and the vertical interconnects 34.

FIG. 5 illustrates an alternate, non-SOI embodiment. In this embodimentthe Ge buffer layer 14 is grown directly on the top surface of the Sisubstrate 10 in the radiation detector region. In this alternateembodiment the various layer thicknesses and overall processing can besubstantially the same as or identical to the process flow described inFIGS. 2-4.

FIG. 7 shows a starting structure for a first, lateral photodetectorfront-side illuminated embodiment. The starting structure is comprisedof the silicon substrate 10 having the overlying BOX layer 12 and theSOI comprised of a Ge layer 14. An etching process is performed (amulti-step etching process) where a portion of the Ge layer 14 and theunderlying BOX layer 12 are removed to expose a surface of the siliconsubstrate 10 in what will be the circuit region 15. In the circuitregion 15 is formed by conventional silicon processing CMOS readout andsupport circuitry 16 for the subsequently formed visible and IRradiation detectors. A typical maximum processing temperature that isachieved during the CMOS processing is about 1000° C. (prior to asiliciding step). As was noted above for the embodiments of FIGS. 1-5, afeature of this invention is to perform high temperature processingprior to the epitaxial deposition of Group III-V material layers. FIG. 7also shows the structure after the layer of protective oxide 18 (e.g.,SiO₂) is grown so as to cover the CMOS circuitry 16. An aperture 18A isthen opened in the oxide layer 18 above the SOI layer where a firstvisible photo detector is desired, followed by the epitaxial growth of aGaAs photodetector 50 within the aperture 18A. The aperture 18A extendsto the surface of the Ge layer 14.

FIG. 6A shows the GaAs photodetector 50 in greater detail. In anon-limiting embodiment the GaAs photodetector 50 can be formed asN-type GaAs layer that is grown on the Ge layer 14 to have a thicknessof about 200 nm. The N-type GaAs layer can be doped with, for example,Si with a dopant concentration of about 5E18 cm⁻³. A substantiallyundoped intrinsic GaAs layer is then grown to have a thickness of about1000 nm, followed by the growth of a P-type GaAs layer having athickness of about 200 nm. The P-type GaAs layer can be doped with, forexample, Zn with a dopant concentration of about 5E18 cm⁻³. The GaAsP—I—N photodetector 50 is responsive to wavelengths of less than about870 nm (i.e., visible wavelengths).

FIG. 8 shows a result of the opening of a second aperture in the oxidelayer 18 (to the surface of the Ge layer 14) and the fabrication of asecond photodetector (a visible wavelength Ge photodetector 52) in thesecond aperture. Prior to epitaxially depositing the Ge photodetector 52that portion of the first aperture 18A that remains above the GaAsdetector 50 can be filled with a dielectric material 18B such as anoxide.

FIG. 6B shows the Ge photodetector 52 in greater detail. An N-type Gelayer is grown on the Ge layer 14 to have a thickness of about 200 nm.The N-type Ge layer can be doped with, for example, Arsenic dopantconcentration of about 5E18 cm⁻³. A substantially undoped intrinsic Gelayer is then grown to have a thickness of about 1000 nm, followed bythe growth of a P-type Ge layer having a thickness of about 200 nm. TheP-type Ge layer can be doped with, for example, Boron with a dopantconcentration of about 5E18 cm⁻³. The Ge P—I—N photodetector 52 isresponsive to wavelengths of less than about 1.3 μm.

FIG. 9 shows a completed lateral photodetector FPA after the additionalfabrication of two lateral IR Group III-V photodetectors and theformation of interconnects between the visible and IR photodetectors andthe CMOS readout circuitry. To form the structure of FIG. 9, afterepitaxially depositing the Ge photodetector 52 that portion of thesecond aperture 18A that remains above the Ge detector 52 can be filledwith the dielectric material 18B. Two additional apertures 18A are thenopened in sequence (or simultaneously) to expose the top surface of theGe layer 14. Into each aperture is deposited the InP/GaAs buffer layer26 followed by the deposition of a first InGaAs photodetector 54 (shownin FIG. 6C) and a second InGaAs photodetector 56 (shown in FIG. 6D). TheInGaAs photodetector 54 is responsive to wavelengths of less than about1.7 μm while the InGaAs photodetector 56 is responsive to wavelengths ofless than about 2.6 μm. The total wavelength range thus spanned in thisnon-limiting embodiment of a multi-color FPA extends from less thanabout 870 nm (photo detector 50) to less than about 2.6 μm (photodetector 56).

FIG. 6C shows the InGaAs photodetector 54 in greater detail. In anon-limiting embodiment the InGaAs photodetector 54 can be formed bygrowing an N-type InP layer that has a thickness of about 200 nm. TheN-type InP is doped N-type using, for example, Si with a dopantconcentration of about 5E18 cm⁻³. This is followed by the growth of asubstantially undoped (intrinsic) layer of InGaAs layer having, in anon-limiting embodiment, the composition In_(0.53)Ga_(0.47)As and athickness of about 1000 nm. This is followed by the growth of a P-typeInAlAs layer having, in a non-limiting embodiment, the compositionIn_(0.52)Al_(0.48)As and a thickness of about 200 nm. This layer can bedoped P-type using, for example, Zn with a dopant concentration of about5E18 cm⁻³.

FIG. 6D shows the InGaAs photodetector 56 in greater detail. In anon-limiting embodiment the InGaAs photodetector 56 can be formed as anN-type InGaAs layer having, in a non-limiting embodiment, thecomposition In_(0.82)Ga_(0.18)As with a thickness of about 200 nm. TheN-type InGaAs is doped N-type using, for example, Si with a dopantconcentration of about 5E18 cm³. This is followed by the growth of asubstantially undoped (intrinsic) layer of InGaAs layer having, in anon-limiting embodiment, the composition In_(0.82)Ga_(0.18)As and athickness of about 1000 nm. This is followed by the growth of a P-typeInGaAs layer having, in a non-limiting embodiment, the compositionIn_(0.82)Ga_(0.18)As and a thickness of about 200 nm. This layer can bedoped P-type using, for example, Zn with a dopant concentration of about5E18 cm⁻³.

In the photodetectors 54 and 56 the presence of the intrinsic layer isoptional.

After forming the photodetectors 50-56 a mesa etch process is performedto expose edge surfaces (as in FIG. 4) and contacts are formed on theexposed edge surfaces. In this embodiment each photodetector 50-56includes two edge contacts, one on the N-type material and one on theP-type material. Apertures are then opened, the CMOS readout circuittransistors have the contact silicide 16A formed (at a temperature ofabout 400° C.), followed by the formation of vertical conductiveinterconnects 34 (e.g., Cu, Al, Au, etc.) to the silicided contacts 16Aand to the contacts formed on the edge portions of the photodetectors50, 52, 54 and 56. Top-side horizontal metal traces are then added toconnect the vertical conductive interconnects 34 of the photodetectors50-54 to the vertical conductive interconnects 34 connected to the CMOSreadout circuitry 16. In this front-side illuminated embodiment the topsurface acts as a receiving surface for incident EM radiation.

It is pointed out that in this and the other described embodiments otherphotodetector types can be employed in addition to or in place of thephotodetectors 50-56. For example, FIG. 6E shows an example of a quantumdot IR photodetector structure wherein a region containing InAs quantumdots is interposed between an N-type GaAs layer and a P-type GaAs layer,each having a thickness of, for example, about 200 nm. FIG. 6F shows anexample of a Type II heterojunction IR photodetector structure, whereinthin layers of InAs and GaSb alternate with one another within aheterojunction region that is interposed between an N-type GaSb layerand a P-type GaSb layer, each having a thickness of, for example, about200 nm.

FIG. 10 shows a bulk Si substrate embodiment that forms, by etching, arecess 10B in the Si substrate 10 wherein the photodetectors 50-56 arefabricated. Either before or after forming the recess 10B the Si CMOSreadout circuitry 16 is fabricated. At the bottom of the recess a Geepitaxial layer (epi-layer) 14A is grown. One suitable thickness for theGe epi-layer 14A is about 50 nm. This is followed, as in FIGS. 7, 8 and9, by the deposition of the oxide 18, the opening of the apertures 18A,18B, etc. and the growth of the photodetectors 50, 52, 54 and 56. Thecontact silicide 18A is formed on the readout transistors and thevertical interconnects 34 are formed to the CMOS readout circuitry 18and to the photodetectors 50-56 as was described above in reference toFIG. 9. Top-side horizontal metal traces are then added to connect thevertical conductive interconnects 34 of the photodetectors 50-54 to thevertical conductive interconnects 34 connected to the CMOS readoutcircuitry 16. In this front-side illuminated embodiment the top surfaceacts as a receiving surface for incident EM radiation. In thisnon-limiting embodiment the recess 10B is etched to a depth in the Sisubstrate 10 that is sufficient to at least accommodate the thicknessesof the Ge epi-layer 10B and the layer thicknesses of the individualphotodetectors 50-56, e.g., at least about 1500 nm.

FIGS. 11 and 12 illustrate the fabrication of a back-side illuminatedFPA embodiment that uses photoconductive Ge and Group III-V detectors asopposed to the photodetector embodiments described thus far. Processingstarts with a SOI wafer, where the silicon substrate 10 can have anydesired thickness (it is subsequently thinned), the BOX layer 12 canhave an exemplary thickness of about 100 nm and the Ge layer 14 can havean exemplary thickness of about 50 nm. FIG. 11 shows the SOI structureafter removal of the BOX 12 and Ge layer 14 in the circuit region, andprocessing to form the Si CMOS readout circuitry 16, including theeventual formation of the contact silicide 16A, on the Si substrate 10.On the Ge layer 14 is then epitaxially grown a photoconductive Ge layerdetector 60 (responsive to wavelengths <1.3 μm), an InP/GaAs bufferlayer 62 and a photoconductive In_(0.82)Ga_(0.18)As layer detector 64(responsive to wavelengths <2.6 μm). In this photoconductive embodimentthe Ge detector layer 60 can have a thickness in a range of about 10 mmto about 500 nm, the InP/GaAs buffer layer 62 can have a thickness in arange of about 50 nm to about 1000 nm, and the In_(0.82)Ga_(0.18)Asdetector layer 64 can have a thickness in a range of about 500 nm toabout 2000 nm. In this embodiment the layers 60 and 64 can be undoped orsubstantially undoped (i.e., intrinsic or substantially intrinsiclayers).

FIG. 12 shows the structure of FIG. 11 after formation of the oxide 18,fabrication of vertical and horizontal interconnects 34 that connect theGe detector layer 60 and the In_(0.82)Ga_(0.18)As detector layer 64 tothe CMOS readout circuitry 16 via the contact silicide 16A. A Sihandling wafer 38 is applied to provide structure support, and the Sisubstrate 10 is thinned to form a thinned Si substrate 10A. In that thebottom surface of the thinned Si substrate 10A functions as thereceiving surface for the incident EM radiation in this back-sideilluminated visible and IR detector embodiment, one suitable thicknessfor the thinned Si substrate 10A is about 100 nm or less.

It is pointed out that in some of the photodetector embodimentsdescribed above the intrinsic layer can be omitted and replaced with alightly doped layer.

The vertically stacked and lateral radiation detecting structures shownin FIGS. 4, 5, 9 and 10 each function as a single pixel in a multi-pixelradiation detector. In practice some thousands or millions of thestacked or lateral Ge P—I—N visible wavelength photo detectors and thestacked or lateral InGaAs P—I—N IR wavelength photodetectors (pixelstructures) are fabricated on the common Si substrate 10 to form a FPAcircuit. Additional circuitry, in addition to the CMOS readout circuitry16, can also be provided such as conventional pixel row and columnmultiplexers, etc. All of this circuitry shares the common Si substratein a monolithic manner. The same applies to the photoconductiveembodiments such as the one shown in FIG. 12. In embodiments of thisinvention there can be two, three, four or more discrete photodetectorsprovided per pixel, where each photodetector is responsive to adifferent range of EM radiation wavelengths (possibly overlapping awavelength range or ranges of one or more other photodetectors withinthe pixel).

An integrated circuit in accordance with the present invention can beemployed in applications, hardware, and/or electronic systems. Suitablehardware and systems in which such integrated circuits can beincorporated include, but are not limited to, any device wherein imagingcapability is desired, including for example personal computers,portable computing and/or communications devices (e.g., cell phones) andstand-alone cameras and other imaging devices. Systems and hardwareincorporating such integrated circuits are considered part of thisinvention. Given the teachings of the invention provided herein, one ofordinary skill in the art will be able to contemplate otherimplementations and applications of the techniques of the invention.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the invention. Theembodiment was chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

As such, various modifications and adaptations may become apparent tothose skilled in the relevant arts in view of the foregoing description,when read in conjunction with the accompanying drawings and the appendedclaims. As but some examples, the use of other similar or equivalentsemiconductor fabrication processes, including deposition processes andetching processes may be used by those skilled in the art. Further, theexemplary embodiments are not intended to be limited to only thosematerials, metals, insulators, N-type dopants, P-type dopants, dopantconcentrations, layer thicknesses and the like that were specificallydisclosed above.

For example, the embodiments of this invention can be practiced usingGroup II-VI materials.

Furthermore, the invention is not to be construed as being limited toonly the specific Group III-V compositions described above. For example,other relative percentages of the constituent Group III-V materials canbe used and thus the wavelength absorption range adjusted accordingly.

Any and all such and similar modifications of the teachings of thisinvention will still fall within the scope of this invention.

What is claimed is:
 1. A structure, comprising a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the silicon substrate; and a radiation detecting pixel disposed on a second portion of the top surface of the silicon substrate, the radiation detecting pixel being comprised of a plurality of radiation detectors connected with the silicon readout circuitry, where the plurality of radiation detectors are comprised of at least one visible wavelength radiation detector comprised of germanium and at least one infrared wavelength radiation detector comprised of a Group III-V semiconductor material; where the radiation detecting pixel comprises a layer of oxide disposed on the second portion of the surface of the silicon substrate and a layer of germanium disposed on the layer of oxide, where the plurality of radiation detectors are each comprised of a plurality of layers of semiconductor material disposed above the layer of germanium and one of vertically adjacent to one another in a stacked manner and laterally adjacent to one another.
 2. The structure as in claim 1, where the at least one visible wavelength radiation detector comprised of germanium comprises a P—I—N photodetector and where the at least one infrared wavelength radiation detector comprised of Group III-V semiconductor material comprises a P—I—N photodetector.
 3. The structure as in claim 1, where the at least one visible wavelength radiation detector comprised of germanium comprises a photoconductive layer and where the at least one infrared wavelength radiation detector comprised of Group III-V semiconductor material comprises a photoconductive layer.
 4. A structure, comprising a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the silicon substrate; and a radiation detecting pixel disposed on a second portion of the top surface of the silicon substrate, the radiation detecting pixel being comprised of a plurality of radiation detectors connected with the silicon readout circuitry, where the plurality of radiation detectors are comprised of at least one visible wavelength radiation detector comprised of germanium and at least one infrared wavelength radiation detector comprised of a Group III-V semiconductor material; where the at least one visible wavelength radiation detector comprised of germanium comprises a first P—I—N photodetector, where the at least one infrared wavelength radiation detector comprised of Group III-V semiconductor material comprises a second P—I—N photo detector that is disposed vertically above the visible wavelength radiation detector comprised of germanium, and further comprising a buffer layer comprised of Group III-V material that is interposed between the first P—I—N photodetector and the second P—I—N photodetector, and where a bottom surface of the silicon substrate opposite the top surface is a radiation receiving surface.
 5. The structure as in claim 1, A structure, comprising a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the silicon substrate; and a radiation detecting pixel disposed on a second portion of the top surface of the silicon substrate, the radiation detecting pixel being comprised of a plurality of radiation detectors connected with the silicon readout circuitry, where the plurality of radiation detectors are comprised of at least one visible wavelength radiation detector comprised of germanium and at least one infrared wavelength radiation detector comprised of a Group III-V semiconductor material; where the radiation detecting pixel comprises a layer of germanium disposed on the second portion of the surface of the silicon substrate, where the at least one visible wavelength radiation detector comprised of germanium comprises a first P—I—N photodetector disposed on the layer of germanium, where the at least one infrared wavelength radiation detector comprised of Group III-V semiconductor material comprises a second P—I—N photodetector that is disposed above the layer of germanium and laterally adjacent to the visible wavelength radiation detector comprised of germanium, and further comprising a buffer layer comprised of Group III-V material that is interposed between the second P—I—N photodetector and the layer of germanium, and where a radiation receiving surface of the structure is a surface opposite to a bottom surface of the silicon substrate.
 6. A structure, comprising a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the silicon substrate; and a radiation detecting pixel disposed on a second portion of the top surface of the silicon substrate, the radiation detecting pixel being comprised of a plurality of radiation detectors connected with the silicon readout circuitry, where the plurality of radiation detectors are comprised of at least one visible wavelength radiation detector comprised of germanium and at least one infrared wavelength radiation detector comprised of a Group III-V semiconductor material; where the second portion of the surface of the silicon substrate is recessed within the silicon substrate below the first portion of the surface of the silicon substrate. 